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| KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator * High Current Gain Bandwidth Product : fT=600MHz (TYP) * High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 20 4 20 250 150 -55 ~ 150 Units V V V mA mW C C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VBE (on) VCE (sat) fT Cob Cc*rbb' NF GPE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Collector-Base Time Constant Noise Figure Power Gain Test Condition IC=10A, IE=0 IC=5mA, IB=0 IE=10A, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCB=6V, IE=0, f=1MHz VCE=6V, IC=1mA f=31.9MHz VCE=6V, IC=1mA RS=50, f=100MHz VCE=6V, IC=1mA f=100MHz 18 400 40 0.72 0.1 600 1.2 12 3.0 22 15 5.0 0.3 Min. 30 20 4 0.1 0.1 240 V V MHz pF ps dB dB Typ. Max. Units V V V A A hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2786 Typical Characteristics 20 18 IB = 110A 10 VCE = 6 V IC [mA], COLLECTOR CURRENT 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 IB = 100A IB = 90A IB = 80A IB = 70A IB = 60A IB = 50A IB = 40A IB = 30A IB = 20A IB = 10A IC [mA], COLLECTOR CURRENT 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 16 18 20 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE [V], BASE-EMITTER VOLTAGE Figure 1. Static Characteristics Figure 2. Base-Emitter On Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 10000 VCE = 6V VCE = 6V hFE, DC CURRENT GAIN 1000 100 100 10 1 10 10 1 10 100 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 3. DC Current Gain Figure 4. fT - IC VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 10 IC = 10 IB 1 VBE(sat) Cob[pF], OUTPUT CAPACITANCE f = 1MHz IE = 0 1 0.1 VCE(sat) 0.01 0.1 0.1 1 10 1 10 100 IC [mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Saturation Voltage Figure 6. Output Capacitance (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2786 Typical Characteristics (Continued) 100 1000 VCE = 6 V 100 MHz 10 VCE = 6 V 10.7 MHz gie [ms], CONDUCTANCE bie [ms], SUSCEPTANCE gfe [ms], CONDUCTANCE bfe [ms], SUSCEPTANCE bie gie 10.7 MHz 100 MHz 100 100 MHz gfe -bfe gfe 10 1 bie 10.7 MHz gie 0.1 -bfe 0.01 0.1 1 10 100 1 0.1 1 10 100 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 7. yie - f Figure 8. yfe - f 0.0 -gre -gre -bre 10.7 MHz 100 MHz 10.7 MHz 1 VCE = 6 V boe 100 MHz VCE = 6 V 100 MHz 0.1 gre [ms], CONDUCTANCE bre [ms], SUSCEPTANCE goe [ms], CONDUCTANCE boe [ms], SUSCEPTANCE goe 10.7 MHz 0.2 0.1 10.7 MHz boe goe 0.3 0.4 -bre 0.5 0.1 1 100 MHz 10 100 0.01 0.1 1 10 100 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 9. yre - f Figure 10. yoe - f 1000 1000 10.7 MHz 100 MHz 100 MHz gib -bib 10 VCE = 6 V VCE = 6 V 10.7 MHz gfb 100 gib [ms], CONDUCTANCE bib [ms], SUSCEPTANCE 100 gfb [ms], CONDUCTANCE bfb [ms], SUSCEPTANCE gib 100 MHz 100 MHz 10.7 MHz gfb bfb 10 10.7 MHz -bib bfb 1 0.1 1 10 100 1 0.1 1 10 100 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 11. yib - f Figure 12. yfb - f (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2786 Typical Characteristics (Continued) 1 10 VCE = 6 V VCE = 6 V IC = 1 mA -brb 100 MHz grb [ms], CONDUCTANCE brb [ms], SUSCEPTANCE gre [ms], CONDUCTANCE bre [ms], SUSCEPTANCE 10.7 MHz -grb 0.1 1 -bre 10.7 MHz -brb 0.1 -gre 100 MHz -grb 0.01 0.1 0.01 1 10 100 10 100 1000 IC [mA], COLLECTOR CURRENT f [MHz], FREQUENCY Figure 13. yrb - f Figure 14. yre - f 1000 10 VCE = 6 V IC = 1 mA VCE = 1 V IC = 1 mA gfe [ms], CONDUCTANCE bfe [ms], SUSCEPTANCE 100 goe [ms], CONDUCTANCE boe [ms], SUSCEPTANCE 1 gfe boe 10 0.1 -bfe goe 1 10 100 1000 0.01 10 100 1000 f [MHz], FREQUENCY f [MHz], FREQUENCY Figure 15. yfe - f Figure 16. yoe - f 25 100 GPE 20 VCE = 6 V f = 100 MHz VCE = 6 V IC = 1 mA gie [ms], CONDUCTANCE bie [ms], SUSCEPTANCE NF [dB], NOISE FIGURE GPE [dB], POWER GAIN 10 15 bie 10 1 gie 5 NF 0 0.1 1 10 0.1 10 100 1000 IC [mA], COLLECTOR CURRENT f [MHz], FREQUENCY Figure 17. Power Gian & NF Figure 18. yie - f (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2786 Typical Characteristics (Continued) (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2786 Package Dimensions TO-92S 4.00 0.20 2.31 0.20 0.66 MAX. (1.10) 0.49 0.10 1.27TYP [1.270.20] 3.72 0.20 1.27TYP [1.270.20] 14.47 0.30 3.70 0.20 0.35 -0.05 +0.10 2.86 0.20 0.77 0.10 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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